Essential Information

Name: Bin Li

Position:  Research Assistant Professor

Highest Degree:PhD

Telephone(office):13798322379

Office:3-121, Huiyuan

Email:lib3@sustech.edu.cn

Research Field:Topological matters, 2D materials, Magnetic materials, etc.


Educational Background

2003.09-2007.06 Bachelor’s Degree, Material Science and Engineering, Hebei University of Technology

2012.09-2017.11 Doctor of Philosophy (Ph.D.), Experimental Condensed Matter Physics, The University of Hong Kong


Working Experience

2007.09-2012.06 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of

Sciences , Junior Researcher

2016.12-2017.01 Southern University of Science and Technology, Visiting Scholar

2017.05-2017.10 Southern University of Science and Technology, Visiting Scholar

2017.11-2019.04 Southern University of Science and Technology, Senior Scientist

2019.05-now Southern University of Science and Technology, Research Assistant Professor


Papers and Patents

[1] Yipu Xia, Bo Wang, Junqiu Zhang, Yue Feng, Bin Li, Xibiao Ren, Hao Tian, Jinpeng Xu, Wingkin Ho, Hu Xu, Chang Liu, Chuanhong Jin and Maohai Xie*, Hole doping in epitaxial MoSe2 monolayer by nitrogen plasma treatment, 2D Materials, 5(4): 041005, (2018).

[2] B. Li, W.G. Chen, X. Guo, W. K. Ho, X.Q. Dai, J.F. Jia, M. H. Xie*, Strain in Epitaxial High-

Index Bi2Se3(221) Films Grown by Molecular-Beam Epitaxy, Applied Surface Science 396, 1825-1830

(2017).

[3] B. Li, Y. P. Xia, W. K. Ho, M. H. Xie*, Suspended Ga2Se3 Film and Epitaxial High-index

Bi2Se3 on GaSb(001) by Molecular-Beam Epitaxy, Journal of Crystal Growth 459, 76-80 (2017).

[4] B. Li, Q. S. Lu, S. G. Xu, Y. P. Xia, W. K. Ho, N. Wang, C. Liu*, M. H. Xie*, Induced robust

topological order on an ordinary insulator hetero-structured with a strong topological insulator,

arXiv:1611.04688 [cond-mat.mtrl-sci].

[5] P. Shang, X. Guo, B. Zhao, X. Dai*, B. Li, J. Jia, Q. Li*, M. Xie*, Nanoclusters of CaSe in

calcium-doped Bi2Se3 grown by molecular-beam epitaxy, Nanotechnology 27, 085601 (2016).

[6] B. Li, X. Guo, W. K. Ho, M. H. Xie*, Strain in epitaxial Bi2Se3 grown on GaN and graphene

substrates: A reflection high-energy electron diffraction study, Applied Physics Letters 107, 081604

(2015).

[7] W. He, S. L. Lu, J. R. Dong*, Y. M. Zhao, X. Y. Ren, K. L. Xiong, B. Li, H. Yang, H. M. Zhu,

X. Y. Chen, X. Kong, Structural and optical properties of GaInP grown on germanium by metalorganic

chemical vapor deposition, Applied Physics Letters 97, 121909 (2010).