Essential Information

Name: Jun-Feng Dai 

Position: Associate Researcher       

Highest Degree:Doctor of Philosophy in Physics

Telephone(office):

Office:Rm 225, Research Building II, SUSTech

Email:daijf@sustech.edu.cn

Research Field:

l   Spin current generation, transport and manipulation in non-magnetic semiconductors.

l   Valleytronics in two-dimensional transition metal dichalcogenides.

l   Pressure-controlled ferromagnetic properties in 2D ferromagnet.

Educational Background

• PhD in Physics, Sep.2006-Jul. 2010: The University of Hong Kong, Hong Kong, China

• MS in Physics, Sep.2003-Jul.2006: Peking University, China

• BS in Physics, Sep.1999-Jul.2003: Liaoning University and Peking University, China

Working Experience

Associate Researcher, Jun. 2020-Now: Shenzhen Institute for Quantum Science and Engineering, SUSTech, Shenzhen, China

Assistant Professor, Jan. 2012-May 2020: Department of Physics, SUSTech, Shenzhen, China

Postdoctoral Fellow, Jul.2010-Dec. 2011: The University of Hong Kong, The Department of Physics, Hong Kong, China


Papers and Patents

1. Pressure-Dependent Intermediate Magnetic Phase in Thin Fe3GeTe2 Flakes; Heshen Wang, Runzhang Xu, Cai Liu, Le Wang, Zhan Zhang, Huimin Su, Shanmin Wang, Yusheng Zhao, Zhaojun Liu, Dapeng Yu, Jia-Wei Mei*, Xiaolong Zou*, Jun-Feng Dai*, The Journal of Physical Chemistry Letters, accepted, 2020

2. Pressure-controlled Structural Symmetry Transition in Multilayer InSe; Huimin Su, Xuan Liu, Chengrong Wei, Junning Li, Qiye Liu, Xuefeng Zhou, Junhong Deng, Huan Yi, Qiaoyan Hao, Yusheng Zhao, Shanmin Wang, Li Huang, Wenjing Zhang*, Guixin Li*, Jun-Feng Dai*, Laser & Photonics Reviews, 1900012, 2019

3.